SLE4436/36E

SLE4406S / SLE4406SE | SLE4418 / SLE4428SLE4432 / SLE4442SLE4436/36ESLE44C10SSLE44C20SU SLE44C42SSLE44C80SSLE44C80SU | SLE44R35
SLE4436 / SLE4436E

SLE4436 / SLE4436E

Intelligent 221-Bit EEPROM Counter
for>20000 Units with Security Logic
and High Security Authentication
Datasheet : 
SLE4436 SLE4436E.pdf
Features

  • 211 bit EEPROM and 16 bit mask-programmable ROM
    • 104 bit user memory fully compatible with SLE 4406/06E
      • 64 bit Identification Area consisting of
        • 16 bit Manufacturer code (mask-programmable ROM)
        • SLE 4436:
          • 8 bit Manufacturer data, card issuer dependent (ROM)
          • 40 bit for personalization data of card issuer (PROM)
        • SLE 4436E:
          • 48 bit for personalization data of card issuer (PROM)
      • 40 bit Counter Area including 1 bit for personalization (PROM/EEPROM)
  • 133 bit additional memory for advanced features
    • 4 bit Counter Backup (anti-tearing flags)
    • 1bit initiation flag for Authentication Key 2
    • 16 bit Data Area 1 for free user access
    • 48 bit Authentication Key 1
    • either 48 bit Data Area 2 for user defined data or 48 bit Authentication key 2
    • 16 bit Data Area 3 for free user access
  • Counter with up to 33352 count units fully compatible with SLE 4406/06E
    • Five stage abacus counter
    • Due to testing purposes a maximum of 21064 count units is guaranteed
  • Counter tearing protection
    • Backup feature activated at choice
  • High Security authentication unit
    • Random number as challenge
    • Individual secret Authentication Key 1
    • Optional individual secret Authentication Key 2
    • Calculation of up to 16 bit response
    • Calculation of a 16 bit response within 30 ms at a clock frequency of 100kHz
  • Transport Code protection for delivery
  • EEPROM security cells in sensitive areas
  • Chip circuitry and chip layout optimised for high security against physical and electrical signal analysis
  • Ambient temperature -35 . . . +80oC
  • Supply voltage 5 V ± 10 %
  • Supply current < 5 mA
  • EEPROM programming time 5 ms
  • ESD protection typical 4000 V
  • Endurance minimum of 105 write/erase cycles/bit
  • Data retention for minimum of 10 years
  • Contact configuration and Answer-to-Reset (synchronous transmission) in accordance to standard ISO/IEC 7816